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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SUP53P06-20-GE3
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1520103SUP53P06-20-GE3 ImageElectro-Films (EFI) / Vishay

SUP53P06-20-GE3

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Specifications
  • Part Number
    SUP53P06-20-GE3
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 9.2A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    19.5 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    3.1W (Ta), 104.2W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    115nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    9.2A (Ta), 53A (Tc)
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