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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTDG14GPT100
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4569065DTDG14GPT100 ImageLAPIS Semiconductor

DTDG14GPT100

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Reference Price(In US Dollars)

In stock
1000+
$0.207
2000+
$0.189
5000+
$0.177
10000+
$0.164
25000+
$0.162
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Specifications
  • Part Number
    DTDG14GPT100
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 2W MPT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.DTDG14GPT100.pdf
    2.DTDG14GPT100.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 500mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    MPT3
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Power - Max
    2W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-243AA
  • Other Names
    DTDG14GPT100TR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    80MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60V 1A 80MHz 2W Surface Mount MPT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A
  • Base Part Number
    DTDG14

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