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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > R6010ANX
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1495819R6010ANX ImageLAPIS Semiconductor

R6010ANX

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Reference Price(In US Dollars)

In stock
1+
$3.83
10+
$3.421
100+
$2.805
500+
$2.272
1000+
$1.916
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Specifications
  • Part Number
    R6010ANX
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 10A TO-220FM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    R6010ANX.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220FM
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Power Dissipation (Max)
    50W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-220-3 Full Pack
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 10A (Ta) 50W (Tc) Through Hole TO-220FM
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta)

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