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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > RGTV00TS65GC11
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506328RGTV00TS65GC11 ImageLAPIS Semiconductor

RGTV00TS65GC11

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Reference Price(In US Dollars)

In stock
1+
$5.44
10+
$4.856
25+
$4.371
100+
$3.982
250+
$3.594
500+
$3.225
1000+
$2.72
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Specifications
  • Part Number
    RGTV00TS65GC11
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    650V 50A FIELD STOP TRENCH IGBT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RGTV00TS65GC11.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 50A
  • Test Condition
    400V, 50A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    41ns/142ns
  • Switching Energy
    1.17mJ (on), 940µJ (off)
  • Supplier Device Package
    TO-247N
  • Series
    -
  • Power - Max
    276W
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    15 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    104nC
  • Detailed Description
    IGBT Trench Field Stop 650V 95A 276W Through Hole TO-247N
  • Current - Collector Pulsed (Icm)
    200A
  • Current - Collector (Ic) (Max)
    95A

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