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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RQ3C150BCTB
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RQ3C150BCTB

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Reference Price(In US Dollars)

In stock
3000+
$0.481
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Specifications
  • Part Number
    RQ3C150BCTB
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CHANNEL 20V 30A 8HSMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.RQ3C150BCTB.pdf
    2.RQ3C150BCTB.pdf
  • Vgs(th) (Max) @ Id
    1.2V @ 1mA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-HSMT (3.2x3)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.7 mOhm @ 15A, 4.5V
  • Power Dissipation (Max)
    20W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerVDFN
  • Other Names
    RQ3C150BCTBTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    40 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4800pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    P-Channel 20V 30A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.2x3)
  • Current - Continuous Drain (Id) @ 25°C
    30A (Tc)

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