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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > RQ3E100MNTB1
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RQ3E100MNTB1

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Reference Price(In US Dollars)

In stock
3000+
$0.483
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Specifications
  • Part Number
    RQ3E100MNTB1
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 10A HSMT8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RQ3E100MNTB1.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-HSMT (3.2x3)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    12.3 mOhm @ 10A, 10V
  • Power Dissipation (Max)
    2W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerVDFN
  • Other Names
    RQ3E100MNTB1TR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    520pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    9.9nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta)

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