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Home > Products > Integrated Circuits (ICs) > Memory > MT29F3T08EQCBBG2-37:B TR
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MT29F3T08EQCBBG2-37:B TR

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Reference Price(In US Dollars)

In stock
1000+
$157.389
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Specifications
  • Part Number
    MT29F3T08EQCBBG2-37:B TR
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    IC FLASH 3T PARALLEL 267MHZ
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Write Cycle Time - Word, Page
    -
  • Voltage - Supply
    2.7 V ~ 3.6 V
  • Technology
    FLASH - NAND
  • Series
    -
  • Packaging
    Tape & Reel (TR)
  • Other Names
    MT29F3T08EQCBBG2-37:B TR-ND
    MT29F3T08EQCBBG2-37:BTR
  • Operating Temperature
    0°C ~ 70°C (TA)
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    3Tb (384G x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND Memory IC 3Tb (384G x 8) Parallel 267MHz
  • Clock Frequency
    267MHz
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MT29F3T08EUCBBM4-37:B TR

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Manufacturers: Micron Technology
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Description: IC FLASH 384G PARALLEL 333MHZ

Manufacturers: Micron Technology
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Description: IC FLASH 3T PARALLEL 333MHZ

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Description: IC FLASH 3T PARALLEL 267MHZ

Manufacturers: Micron Technology
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Description: IC FLASH 384G PARALLEL 333MHZ

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Description: IC FLASH 3T PARALLEL 333MHZ

Manufacturers: Micron Technology
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MT29F3T08EQCBBG2-37ES:B TR

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Description: IC FLASH 3T PARALLEL 267MHZ

Manufacturers: Micron Technology
In stock

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