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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N6051
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JAN2N6051

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Specifications
  • Part Number
    JAN2N6051
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 80V 12A TO-3
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N6051.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 120mA, 12A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    TO-3 (TO-204AA)
  • Series
    Military, MIL-PRF-19500/501
  • Power - Max
    150W
  • Packaging
    Bulk
  • Package / Case
    TO-3
  • Other Names
    1086-21078
    1086-21078-MIL
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 80V 12A 150W Through Hole TO-3 (TO-204AA)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 6A, 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    12A

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