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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N6251
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JAN2N6251

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Specifications
  • Part Number
    JAN2N6251
  • Manufacturer/Brand
    Microsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 350V 10A TO-3
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JAN2N6251.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.67A, 10A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-3 (TO-204AA)
  • Series
    Military, MIL-PRF-19500/510
  • Power - Max
    5.5W
  • Packaging
    Bulk
  • Package / Case
    TO-3
  • Other Names
    1086-21092
    1086-21092-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 350V 10A 5.5W Through Hole TO-3 (TO-204AA)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    6 @ 10A, 3V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    10A

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