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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > QJD1210010
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QJD1210010

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Specifications
  • Part Number
    QJD1210010
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 1200V 100A SIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    5V @ 10mA
  • Supplier Device Package
    Module
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 100A, 20V
  • Power - Max
    1080W
  • Packaging
    Bulk
  • Package / Case
    Module
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10200pF @ 800V
  • Gate Charge (Qg) (Max) @ Vgs
    500nC @ 20V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module
  • Current - Continuous Drain (Id) @ 25°C
    100A (Tc)
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