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Home > Products > Integrated Circuits (ICs) > Memory > TH58NYG3S0HBAI6
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4602196TH58NYG3S0HBAI6 ImageToshiba Memory America, Inc.

TH58NYG3S0HBAI6

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Reference Price(In US Dollars)

In stock
338+
$7.337
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Specifications
  • Part Number
    TH58NYG3S0HBAI6
  • Manufacturer/Brand
    Kioxia America, Inc.
  • Stock Quantity
    In stock
  • Description
    IC FLASH 8G PARALLEL 67VFBGA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TH58NYG3S0HBAI6.pdf
  • Write Cycle Time - Word, Page
    25ns
  • Voltage - Supply
    1.7 V ~ 1.95 V
  • Technology
    FLASH - NAND (SLC)
  • Supplier Device Package
    67-VFBGA (6.5x8)
  • Series
    -
  • Packaging
    Tray
  • Package / Case
    67-VFBGA
  • Other Names
    TH58NYG3S0HBAI6JDH
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    8Gb (1G x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FLASH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FLASH - NAND (SLC) Memory IC 8Gb (1G x 8) Parallel 25ns 67-VFBGA (6.5x8)
  • Access Time
    25ns

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