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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1955FVATPL3Z
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22975472SA1955FVATPL3Z ImageToshiba Semiconductor and Storage

2SA1955FVATPL3Z

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Reference Price(In US Dollars)

In stock
1+
$0.53
10+
$0.38
25+
$0.295
100+
$0.224
250+
$0.158
500+
$0.127
1000+
$0.097
2500+
$0.084
Inquiry Online
Specifications
  • Part Number
    2SA1955FVATPL3Z
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 12V 0.4A VESM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SA1955FVATPL3Z.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 200mA
  • Transistor Type
    PNP
  • Supplier Device Package
    CST3
  • Series
    -
  • Power - Max
    100mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-101, SOT-883
  • Other Names
    2SA1955FVATPL3ZCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    130MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount CST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    300 @ 10mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    400mA

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