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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1962-O(Q)
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60870312SA1962-O(Q) ImageToshiba Semiconductor and Storage

2SA1962-O(Q)

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Reference Price(In US Dollars)

In stock
1+
$3.23
10+
$2.888
50+
$2.599
100+
$2.368
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Specifications
  • Part Number
    2SA1962-O(Q)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 230V 15A TO-3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SA1962-O(Q).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    230V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 800mA, 8A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-3P(N)
  • Series
    -
  • Power - Max
    130W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Other Names
    2SA1962-OQ
    2SA1962OQ
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 230V 15A 30MHz 130W Through Hole TO-3P(N)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 1A, 5V
  • Current - Collector Cutoff (Max)
    5µA (ICBO)
  • Current - Collector (Ic) (Max)
    15A
  • Base Part Number
    2SA1962

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