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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1103MFV,L3F

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RN1103MFV,L3F Image

Toshiba Semiconductor and Storage

RN1103MFV,L3F

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Reference Price(In US Dollars)

In stock

8000+

$0.029

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Specifications

Part Number

RN1103MFV,L3F
Manufacturer/Brand

TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Stock Quantity

In stock
Description

TRANS PREBIAS NPN 150MW VESM
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

RN1103MFV,L3F.pdf
Voltage - Collector Emitter Breakdown (Max)

50V
Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA
Transistor Type

NPN - Pre-Biased
Supplier Device Package

VESM
Series

-
Resistor - Emitter Base (R2)

22 kOhms
Resistor - Base (R1)

22 kOhms
Power - Max

150mW
Packaging

Tape & Reel (TR)
Package / Case

SOT-723
Other Names

RN1103MFV,L3F(B
RN1103MFV,L3F(T
RN1103MFVL3F
RN1103MFVL3FTR
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Detailed Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V
Current - Collector Cutoff (Max)

500nA
Current - Collector (Ic) (Max)

100mA

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