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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1105ACT(TPL3)

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RN1105ACT(TPL3) Image

Toshiba Semiconductor and Storage

RN1105ACT(TPL3)

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Specifications

Part Number

RN1105ACT(TPL3)
Manufacturer/Brand

TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Stock Quantity

In stock
Description

TRANS PREBIAS NPN 0.1W CST3
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

RN1105ACT(TPL3).pdf
ECAD Model
Voltage - Collector Emitter Breakdown (Max)

50V
Vce Saturation (Max) @ Ib, Ic

150mV @ 250µA, 5mA
Transistor Type

NPN - Pre-Biased
Supplier Device Package

CST3
Series

-
Resistor - Emitter Base (R2)

47 kOhms
Resistor - Base (R1)

2.2 kOhms
Power - Max

100mW
Packaging

Original-Reel®
Package / Case

SC-101, SOT-883
Other Names

RN1105ACT(TPL3)DKR
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Detailed Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V
Current - Collector Cutoff (Max)

500nA
Current - Collector (Ic) (Max)

80mA

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