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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1106ACT(TPL3)
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4025841RN1106ACT(TPL3) ImageToshiba Semiconductor and Storage

RN1106ACT(TPL3)

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Specifications
  • Part Number
    RN1106ACT(TPL3)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 0.1W CST3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1106ACT(TPL3).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 250µA, 5mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    CST3
  • Series
    -
  • Resistor - Emitter Base (R2)
    47 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    100mW
  • Packaging
    Original-Reel®
  • Package / Case
    SC-101, SOT-883
  • Other Names
    RN1106ACT(TPL3)DKR
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    80mA

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