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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1109MFV,L3F
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1626552RN1109MFV,L3F ImageToshiba Semiconductor and Storage

RN1109MFV,L3F

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Specifications
  • Part Number
    RN1109MFV,L3F
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 50V 500NA VESM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1109MFV,L3F.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 5mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    VESM
  • Series
    -
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Resistor - Base (R1)
    47 kOhms
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-723
  • Other Names
    RN1109MFVL3F
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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