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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1112(T5L,F,T)
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4678968RN1112(T5L,F,T) ImageToshiba Semiconductor and Storage

RN1112(T5L,F,T)

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Specifications
  • Part Number
    RN1112(T5L,F,T)
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 0.1W SSM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    RN1112(T5L,F,T).pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 250µA, 5mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SSM
  • Series
    -
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    100mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-75, SOT-416
  • Other Names
    RN1112(T5LFT)TR
    RN1112T5LFT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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