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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK10Q60W,S1VQ
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1462820TK10Q60W,S1VQ ImageToshiba Semiconductor and Storage

TK10Q60W,S1VQ

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Reference Price(In US Dollars)

In stock
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$3.49
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Specifications
  • Part Number
    TK10Q60W,S1VQ
  • Manufacturer/Brand
    TAEC Product (Toshiba Electronic Devices and Storage Corporation)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 9.7A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TK10Q60W,S1VQ.pdf
  • Vgs(th) (Max) @ Id
    3.7V @ 500µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    DTMOSIV
  • Rds On (Max) @ Id, Vgs
    430 mOhm @ 4.9A, 10V
  • Power Dissipation (Max)
    80W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Other Names
    TK10Q60W,S1VQ(S
    TK10Q60WS1VQ
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 300V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 9.7A (Ta) 80W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    9.7A (Ta)

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