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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > EMX1DXV6T5G
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27621EMX1DXV6T5G ImageAMI Semiconductor / ON Semiconductor

EMX1DXV6T5G

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Reference Price(In US Dollars)

In stock
1+
$0.41
10+
$0.309
100+
$0.193
500+
$0.132
1000+
$0.101
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Specifications
  • Part Number
    EMX1DXV6T5G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 50V 0.1A SOT563
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EMX1DXV6T5G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 5mA, 50mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    SOT-563
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMX1DXV6T5GOSDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    180MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 180MHz 500mW Surface Mount SOT-563
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1mA, 6V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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