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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > EMX18T2R
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6348508EMX18T2R ImageLAPIS Semiconductor

EMX18T2R

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Reference Price(In US Dollars)

In stock
8000+
$0.166
16000+
$0.155
24000+
$0.153
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Specifications
  • Part Number
    EMX18T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 12V 0.5A 6EMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMX18T2R.pdf
    2.EMX18T2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 10mA, 200mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    EMT6
  • Series
    -
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMX18T2R-ND
    EMX18T2RTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    320MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 12V 500mA 320MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    270 @ 10mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    *MX18

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