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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > EMX26T2R
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4336087EMX26T2R ImageLAPIS Semiconductor

EMX26T2R

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Reference Price(In US Dollars)

In stock
8000+
$0.142
16000+
$0.132
24000+
$0.13
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Specifications
  • Part Number
    EMX26T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 50V 0.15A 6EMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.EMX26T2R.pdf
    2.EMX26T2R.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 5mA, 50mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    EMT6
  • Series
    -
  • Power - Max
    150mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMX26T2R-ND
    EMX26T2RTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 250MHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    820 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    300nA (ICBO)
  • Current - Collector (Ic) (Max)
    150mA
  • Base Part Number
    *MX26

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