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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > EMX4T2R
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6618500EMX4T2R ImageLAPIS Semiconductor

EMX4T2R

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Reference Price(In US Dollars)

In stock
1+
$0.63
10+
$0.532
25+
$0.466
100+
$0.399
250+
$0.346
500+
$0.293
1000+
$0.226
2500+
$0.206
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Specifications
  • Part Number
    EMX4T2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS 2NPN 20V 0.05A 6EMT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EMX4T2R.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 4mA, 20mA
  • Transistor Type
    2 NPN (Dual)
  • Supplier Device Package
    EMT6
  • Series
    -
  • Power - Max
    150mW
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    EMX4T2RDKR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    1.5GHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 50mA 1.5GHz 150mW Surface Mount EMT6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    56 @ 10mA, 10V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    50mA
  • Base Part Number
    MX4

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