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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2020ENG
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4402491EPC2020ENG ImageEPC

EPC2020ENG

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Reference Price(In US Dollars)

In stock
10+
$10.125
100+
$8.325
250+
$7.65
500+
$6.975
1000+
$6.075
2500+
$5.85
Inquiry Online
Specifications
  • Part Number
    EPC2020ENG
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 60V 60A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Test
    1800pF @ 30V
  • Voltage - Breakdown
    Die
  • Vgs(th) (Max) @ Id
    2.2 mOhm @ 31A, 5V
  • Technology
    GaNFET (Gallium Nitride)
  • Series
    eGaN®
  • RoHS Status
    Tray
  • Rds On (Max) @ Id, Vgs
    60A (Ta)
  • Polarization
    Die
  • Other Names
    917-EPC2020ENG
    EPC2020ENGRB2
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    EPC2020ENG
  • Input Capacitance (Ciss) (Max) @ Vds
    16nC @ 5V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5V @ 16mA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 60V 60A (Ta) Surface Mount Die
  • Drain to Source Voltage (Vdss)
    -
  • Description
    TRANS GAN 60V 60A BUMPED DIE
  • Current - Continuous Drain (Id) @ 25°C
    60V
  • Capacitance Ratio
    -
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