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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > EPC2021ENGR
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5923565EPC2021ENGR ImageEPC

EPC2021ENGR

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Specifications
  • Part Number
    EPC2021ENGR
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 80V 60A BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Test
    1700pF @ 40V
  • Voltage - Breakdown
    Die
  • Vgs(th) (Max) @ Id
    2.5 mOhm @ 29A, 5V
  • Technology
    GaNFET (Gallium Nitride)
  • Series
    eGaN®
  • RoHS Status
    Digi-Reel®
  • Rds On (Max) @ Id, Vgs
    60A (Ta)
  • Polarization
    Die
  • Other Names
    917-EPC2021ENGRDKR
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Part Number
    EPC2021ENGR
  • Input Capacitance (Ciss) (Max) @ Vds
    15nC @ 5V
  • Gate Charge (Qg) (Max) @ Vgs
    2.5V @ 14mA
  • FET Feature
    N-Channel
  • Expanded Description
    N-Channel 80V 60A (Ta) Surface Mount Die
  • Drain to Source Voltage (Vdss)
    -
  • Description
    TRANS GAN 80V 60A BUMPED DIE
  • Current - Continuous Drain (Id) @ 25°C
    80V
  • Capacitance Ratio
    -
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Description: TRANS GAN 200V 8.5A BUMPED DIE

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Description: TRANS GAN 80V 90A BUMPED DIE

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Description: TRANS GAN 30V 60A BUMPED DIE

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Description: TRANS GAN 30V 60A BUMPED DIE

Manufacturers: EPC
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Description: TRANS GAN 60V 60A BUMPED DIE

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In stock
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Description: TRANS GAN 60V 60A BUMPED DIE

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Description: TRANS GAN 300V 4A BUMPED DIE

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