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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB8453LZ

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FDB8453LZ Image

AMI Semiconductor / ON Semiconductor

FDB8453LZ

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Specifications

Part Number

FDB8453LZ
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 40V 16.1A TO-263AB
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDB8453LZ.pdf
ECAD Model
Vgs(th) (Max) @ Id

3V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

TO-263AB
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

7 mOhm @ 17.6A, 10V
Power Dissipation (Max)

3.1W (Ta), 66W (Tc)
Packaging

Original-Reel®
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

FDB8453LZDKR
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

3545pF @ 20V
Gate Charge (Qg) (Max) @ Vgs

66nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

40V
Detailed Description

N-Channel 40V 16.1A (Ta), 50A (Tc) 3.1W (Ta), 66W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C

16.1A (Ta), 50A (Tc)

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