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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB86102LZ

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FDB86102LZ Image

AMI Semiconductor / ON Semiconductor

FDB86102LZ

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Reference Price(In US Dollars)

In stock

1+

$1.91

10+

$1.689

100+

$1.335

Inquiry Online

Specifications

Part Number

FDB86102LZ
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 100V 30A D2PAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDB86102LZ.pdf
ECAD Model
Vgs(th) (Max) @ Id

3V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

TO-263AB
Series

PowerTrench®
Rds On (Max) @ Id, Vgs

24 mOhm @ 8.3A, 10V
Power Dissipation (Max)

3.1W (Ta)
Packaging

Original-Reel®
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

FDB86102LZDKR
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

39 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1275pF @ 50V
Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

100V
Detailed Description

N-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C

8.3A (Ta), 30A (Tc)

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