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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB86360-F085
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1303162FDB86360-F085 ImageAMI Semiconductor / ON Semiconductor

FDB86360-F085

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Reference Price(In US Dollars)

In stock
1+
$5.35
10+
$4.773
100+
$3.914
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Specifications
  • Part Number
    FDB86360-F085
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 110A TO263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDB86360-F085.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Series
    Automotive, AEC-Q101, PowerTrench®
  • Rds On (Max) @ Id, Vgs
    1.8 mOhm @ 80A, 10V
  • Power Dissipation (Max)
    333W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    FDB86360-F085CT
    FDB86360_F085CT
    FDB86360_F085CT-ND
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    14600pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    253nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263AB)
  • Current - Continuous Drain (Id) @ 25°C
    110A (Tc)

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