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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB86569-F085

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FDB86569-F085 Image

AMI Semiconductor / ON Semiconductor

FDB86569-F085

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Reference Price(In US Dollars)

In stock

800+

$0.996

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Specifications

Part Number

FDB86569-F085
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 60V 80A D2PAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDB86569-F085.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

D²PAK (TO-263AB)
Series

Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs

5.6 mOhm @ 80A, 10V
Power Dissipation (Max)

94W (Tj)
Packaging

Tape & Reel (TR)
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

FDB86569-F085TR
FDB86569_F085
FDB86569_F085TR
FDB86569_F085TR-ND
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 30V
Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

60V
Detailed Description

N-Channel 60V 80A (Tc) 94W (Tj) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C

80A (Tc)

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