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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDB86563-F085

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6724450

FDB86563-F085 Image

AMI Semiconductor / ON Semiconductor

FDB86563-F085

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Reference Price(In US Dollars)

In stock

800+

$1.90

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Specifications

Part Number

FDB86563-F085
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 60V 110A TO-263
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FDB86563-F085.pdf
Vgs(th) (Max) @ Id

4V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

D²PAK (TO-263AB)
Series

Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs

1.8 mOhm @ 80A, 10V
Power Dissipation (Max)

333W (Tc)
Packaging

Tape & Reel (TR)
Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names

FDB86563-F085TR
FDB86563_F085
FDB86563_F085TR
FDB86563_F085TR-ND
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

10100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs

163nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

10V
Drain to Source Voltage (Vdss)

60V
Detailed Description

N-Channel 60V 110A (Tc) 333W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C

110A (Tc)

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